1 http://www.fujielectric.com/products/semiconductor/ 1MBI50U4F-120L-50 igbt modules igbt module (u series) 1200v / 50a / 1 in one package features high speed switching voltage drive low inductance module structure applications inverter db for motor drive ac and dc servo drive amplifer (db) active pfc industrial machines maximum ratings and characteristics absolute maximum ratings (at tc=25 c unless otherwise specifed) items symbols conditions maximum ratings units collector-emitter voltage v ces 1200 v gate-emitter voltage v ges 20 v collector current ic continuous tc=25c 75 a tc=80c 50 ic pulse 1ms tc=25c 150 tc=80c 100 -ic 25 -ic pulse 1ms 50 collector power dissipation pc 1 device 275 w reverse voltage for fwd vr 1200 v forword current for fwd if continuous 75 a if pulse 1ms 150 junction temperature tj +150 c storage temperature tstg -40~+125 c isolation voltage between terminal and copper base (*1) v iso ac : 1min. 2500 vac screw torque mounting (*2) - 3.5 nm terminals (*3) note *1: all terminals should be connected together when isolation test will be done. note *2: recommendable value : 2.5 to 3.5 nm (m5 or m6) note *3: recommendable value : 2.5 to 3.5 nm (m5)
2 1MBI50U4F-120L-50 http://www.fujielectric.com/products/semiconductor/ 3 igbt modules electrical characteristics (at tj= 25c unless otherwise specifed) items symbols conditions characteristics units min. typ. max. zero gate voltage collector current i ces v ge = 0v, v ce = 1200v - - 1.0 ma gate-emitter leakage current i ges v ce = 0v, v ge = 20v - - 200 na gate-emitter threshold voltage v ge (th) v ce = 20v, i c = 50ma 4.5 6.5 8.5 v collector-emitter saturation voltage v ce (sat) (terminal) v ge = 15v i c = 50a tj=25c - 2.00 2.15 v tj=125c - 2.20 - v ce (sat) (chip) tj=25c - 1.90 2.05 tj=125c - 2.10 - input capacitance cies v ge = 0v, v ce = 10v, f = 1mhz - 6 - nf turn-on time ton v cc = 600v, i c = 50a v ge = 15v, r g = 22? - 0.32 1.20 s tr - 0.10 0.60 tr(i) - 0.03 - turn-off time toff - 0.41 1.00 tf - 0.07 0.30 forward on voltage v f (terminal) v ge = 0v i f = 25a tj=25c - 1.65 2.00 v tj=125c - 1.75 - v f (chip) tj=25c - 1.60 1.85 tj=125c - 1.70 - reverse current ir v ce = 1200v - - 1.0 ma forward on voltage v f (terminal) v ge = 0v i f = 75a tj=25c - 1.75 1.90 v tj=125c - 1.90 - v f (chip) tj=25c - 1.60 1.75 tj=125c - 1.75 - reverse recovery time trr i f = 75a - - 0.35 s lead resistance, terminal-chip(*4) r lead - 1.39 - m? note *4: biggest internal terminal resistance among arm. thermal resistance characteristics items symbols conditions characteristics units min. typ. max. thermal resistance (1device) rth(j-c) igbt - - 0.45 c/w inverse diode - - 1.19 fwd - - 0.48 contact thermal resistance rth(c-f) with thermal compound (*5) - 0.05 - note *5: this is the value which is defned mounting on the additional cooling fn with thermal compound.
2 3 igbt modules http://www.fujielectric.com/products/semiconductor/ 1MBI50U4F-120L-50 characteristics (representative) dynamic gate charge (typ.) capacitance vs. collector-emitter voltage (typ.) v ge =0v, f=1mhz, tj=25 o c vcc=600v, ic=50a, tj=25 o c collector current vs. collector-emitter voltage (typ.) tj=25 o c / chip collector current vs. collector-emitter voltage (typ.) tj=125 o c / chip collector current vs. collector-emitter voltage (typ.) v ge =15v / chip collector-emitter voltage vs. gate-emitter voltage (typ.) tj=25 o c / chip 0 25 50 75 100 125 0 1 2 3 4 5 collector-emitter voltage : v ce [ v ] co ll e c t or c urren t : i c [ a ] 0 25 50 75 100 125 0 1 2 3 4 5 collector-emitter voltage : v ce [ v ] c o ll e ct o r c u rr en t : ic [a ] collector-emitter voltage : v ce [ v ] 0 25 50 75 100 125 0 1 2 3 4 5 collector-emitter voltage : v ce [ v ] c o ll e ct o r c u rr en t : ic [ a ] collector- emitter voltage : v ce [ 200v/div ] gate-emitter voltage : v ge [ 5v/div ] capacitance : cies, coes, cres [ nf ] 0 2 4 6 8 10 5 10 15 20 25 gate-emitter voltage : v ge [ v ] 0.1 1.0 10.0 100.0 0 10 20 30 collector-emitter voltage : v ce [ v ] 0 100 200 300 gate charge : qg [ nc ] 0 v ge =20v v ge =20v 15v 15v 12v 12v 10v 10v 8v 8v v ge v ce cies cres coes ic=200a ic=100a ic=50a tj=125 o c tj=25 o c
4 1MBI50U4F-120L-50 http://www.fujielectric.com/products/semiconductor/ 5 igbt modules switching loss vs. collector current (typ.) vcc=600v, ic=50a, v ge =15v, tj=25 o c switching time vs. gate resistance (typ.) switching time vs. collector current (typ.) switching time vs. collector current (typ.) vcc=600v, v ge =15v, r g =22?, tj=25 o c vcc=600v, v ge =15v, r g =22?, tj=125 o c vcc=600v, v ge =15v, r g =22? +vge=15v, -v ge <= 15v, r g >= 22?, tj <= 125 o c switching loss vs. gate resistance (typ.) reverse bias safe operating area (max.) vcc=600v, ic=50a, v ge =15v, tj=125 o c 10 100 1000 10000 0 25 50 75 100 collector current : ic [ a ] 10 100 1000 10000 0 25 50 75 100 collector current : ic [ a ] 10 100 1000 10000 10 100 1000 gate resistance : r g [?] 0 2 4 6 8 10 0 25 50 75 100 collector current : ic [ a ] 0 10 20 10 100 1000 gate resistance : r g [?] 0 25 50 75 100 125 0 400 800 1200 1600 collector-emitter voltage : v ce [ v ] c o ll e ct o r c u rr en t : ic [ a ] switching loss : eon, eoff, err [ mj/pulse ] switching time : ton, tr, toff, tf [ nsec ] switching loss : eon, eoff, err [ mj/pulse ] switching time : ton, tr, toff, tf [ nsec ] switching time : ton, tr, toff, tf [ nsec ] toff toff ton ton tr tr tf tf toff ton tr tf eon(125 o c) eon eoff err eoff(125 o c) eoff(25 o c) eon(25 o c) err(125 o c) err(25 o c)
4 5 igbt modules http://www.fujielectric.com/products/semiconductor/ 1MBI50U4F-120L-50 chip fwd fwd inverse diode transient thermal resistance (max.) reverse recovery characteristics (typ.) forward current vs. forward on voltage (typ.) vcc=600v, v ge =15v, r g =22? forward current vs. forward on voltage (typ.) chip 0 50 100 150 200 0 1 2 3 4 forward on voltage : v f [ v ] f o r wa r d c u rr en t : i f [ a ] 10 100 1000 0 25 50 75 100 forward current : i f [ a ] 0.01 0.10 1.00 10.00 0.001 0.010 0.100 1.000 pulse width : pw [ sec ] 0 10 20 30 40 50 60 0 1 2 3 4 forward on voltage : v f [ v ] f o r wa r d c u rr en t : i f [ a ] reverse recovery current : irr [ a ] reverse recovery time : trr [ nsec ] thermal resistance : rth(j-c) [ o c/w ] inberse diode tj=25 o c tj=125 o c tj=25 o c tj=125 o c irr(25 o c) trr(125 o c) irr(125 o c) trr(25 o c) fwd igbt
6 1MBI50U4F-120L-50 http://www.fujielectric.com/products/semiconductor/ 7 igbt modules outline drawings, mm equivalent circuit schematic 3-m5 2-?6.5 2.7max. 30 6 c1 e2 c2e1 g2 e2 e1 g1 23 23 34 17 4 4 22.3 8 0.5 80 94
6 7 igbt modules http://www.fujielectric.com/products/semiconductor/ 1MBI50U4F-120L-50 warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of may 2011. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sur to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric co., ltd. is (or shall be deemed) granted. fuji electric co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design failsafe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2011 by fuji electric co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric co., ltd. or its sales agents before using the product. neither fuji electric co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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